ISRO CS 2014
February 11, 2025ACID-properties
February 12, 2025Memory-Interfacing
| Question 3 |
A 32-bit wide main memory unit with a capacity of 1 GB is built using 256M × 4-bit DRAM chips. The number of rows of memory cells in the DRAM chip is 214. The time taken to perform one refresh operation is 50 nanoseconds. The refresh period is 2 milliseconds. The percentage (rounded to the closest integer) of the time available for performing the memory read/write operations in the main memory unit is _________.
| 59% | |
| 60% | |
| 61% | |
| 62% |
There are 214 rows, so time taken to refresh all the rows = 214 * 50ns = 0.82 milliseconds
It is given that total refresh period is 2ms. The refresh period contains the time to refresh all the rows and also the time to perform read/write operation.
So % time spent in refresh = (Time taken to refresh all rows / refresh period)*100
= (0.82 ms / 2ms)*100
= 41%
So the % of time for read/write operation = 100 – 41 = 59%
There are 214 rows, so time taken to refresh all the rows = 214 * 50ns = 0.82 milliseconds
It is given that total refresh period is 2ms. The refresh period contains the time to refresh all the rows and also the time to perform read/write operation.
So % time spent in refresh = (Time taken to refresh all rows / refresh period)*100
= (0.82 ms / 2ms)*100
= 41%
So the % of time for read/write operation = 100 – 41 = 59%